首页> 美国卫生研究院文献>Scientific Reports >Edge states and integer quantum Hall effect in topological insulator thin films
【2h】

Edge states and integer quantum Hall effect in topological insulator thin films

机译:拓扑绝缘体薄膜的边缘状态和整数量子霍尔效应

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.
机译:整数量子霍尔效应是二维的量子物质的拓扑状态,最近在三维拓扑绝缘体薄膜中被观察到。在这里,我们研究了强磁场下拓扑绝缘子中表面狄拉克费米子的朗道能级和边缘状态。我们检查了霍尔电导的量子平台的形成,并发现了两种不同的模式,在一种模式中,填充数涵盖所有整数,而在另一种模式中,填充数仅涵盖奇数整数。我们专注于最接近零能量的量子平台,并论证了由于结构反转不对称而导致的量子自旋霍尔效应的分解。量子霍尔态的相图是磁场,栅极电压和化学势的函数。这项工作建立了边缘状态的直观图像,以了解拓扑绝缘体薄膜中狄拉克电子的整数量子霍尔效应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号