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Charge density wave transition in single-layer titanium diselenide

机译:单层二硒化钛中的电荷密度波跃迁

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摘要

A single molecular layer of titanium diselenide (TiSe2) is a promising material for advanced electronics beyond graphene—a strong focus of current research. Such molecular layers are at the quantum limit of device miniaturization and can show enhanced electronic effects not realizable in thick films. We show that single-layer TiSe2 exhibits a charge density wave (CDW) transition at critical temperature TC=232±5 K, which is higher than the bulk TC=200±5 K. Angle-resolved photoemission spectroscopy measurements reveal a small absolute bandgap at room temperature, which grows wider with decreasing temperature T below TC in conjunction with the emergence of (2 × 2) ordering. The results are rationalized in terms of first-principles calculations, symmetry breaking and phonon entropy effects. The observed Bardeen-Cooper-Schrieffer (BCS) behaviour of the gap implies a mean-field CDW order in the single layer and an anisotropic CDW order in the bulk.
机译:单分子二硒化钛(TiSe2)是石墨烯以外的先进电子技术的有前途的材料,这是当前研究的重点。这样的分子层处于装置小型化的量子极限,并且可以显示出在厚膜中无法实现的增强的电子效应。我们发现单层TiSe2在临界温度TC = 232±5 K时表现出电荷密度波(CDW)跃迁,高于体温TC = 200±5 K角分辨光发射光谱法测量显示出很小的绝对带隙在室温下,随着温度T低于TC并伴随(2×2)有序出现,温度会越来越宽。根据第一性原理计算,对称破坏和声子熵效应对结果进行了合理化。观察到的间隙的Bardeen-Cooper-Schrieffer(BCS)行为暗示了单层中的平均场CDW阶和本体中的各向异性CDW阶。

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