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High-performance hollow sulfur nanostructured battery cathode through a scalable room temperature one-step bottom-up approach

机译:高性能空心硫纳米结构电池阴极可扩展室温一步自底向上方法

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摘要

Sulfur is an exciting cathode material with high specific capacity of 1,673 mAh/g, more than five times the theoretical limits of its transition metal oxides counterpart. However, successful applications of sulfur cathode have been impeded by rapid capacity fading caused by multiple mechanisms, including large volume expansion during lithiation, dissolution of intermediate polysulfides, and low ionic/electronic conductivity. Tackling the sulfur cathode problems requires a multifaceted approach, which can simultaneously address the challenges mentioned above. Herein, we present a scalable, room temperature, one-step, bottom-up approach to fabricate monodisperse polymer (polyvinylpyrrolidone)-encapsulated hollow sulfur nanospheres for sulfur cathode, allowing unprecedented control over electrode design from nanoscale to macroscale. We demonstrate high specific discharge capacities at different current rates (1,179, 1,018, and 990 mAh/g at C/10, C/5, and C/2, respectively) and excellent capacity retention of 77.6% (at C/5) and 73.4% (at C/2) after 300 and 500 cycles, respectively. Over a long-term cycling of 1,000 cycles at C/2, a capacity decay as low as 0.046% per cycle and an average coulombic efficiency of 98.5% was achieved. In addition, a simple modification on the sulfur nanosphere surface with a layer of conducting polymer, poly(3,4-ethylenedioxythiophene), allows the sulfur cathode to achieve excellent high-rate capability, showing a high reversible capacity of 849 and 610 mAh/g at 2C and 4C, respectively.
机译:硫是一种令人兴奋的正极材料,具有1,673 mAh / g的高比容量,是其过渡金属氧化物对应物理论极限的五倍以上。但是,由于多种机理引起的快速容量衰减,阻碍了硫阴极的成功应用,这些机理包括在锂化过程中的大体积膨胀,中间多硫化物的溶解以及低的离子/电子电导率。解决硫阴极问题需要采取多方面的方法,该方法可以同时解决上述挑战。在这里,我们提出了一种可扩展的,室温的,一步一步的,自下而上的方法来制造用于硫阴极的单分散聚合物(聚乙烯吡咯烷酮)封装的空心硫纳米球,从而实现了从纳米级到宏观级电极设计的前所未有的控制。我们展示了在不同电流速率下的高比放电容量(在C / 10,C / 5和C / 2下分别为1,179、1,018和990 mAh / g),出色的容量保持率为77.6%(在C / 5下), 300和500次循环后分别达到73.4%(在C / 2下)。在C / 2下1,000个循环的长期循环中,每个循环的容量衰减低至0.046%,平均库仑效率达到98.5%。此外,在硫纳米球表面上用导电聚合物聚(3,4-乙撑二氧噻吩)层进行简单修饰,可使硫阴极获得优异的高倍率容量,表现出849和610 mAh /的高可逆容量。 g分别在2C和4C。

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