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Alloying and Hardness of Eutectics with Nbss and Nb5Si3 in Nb-silicide Based Alloys

机译:Nb-硅化物基合金中Nbss和Nb5Si3的共晶合金化和硬度

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摘要

In Nb-silicide based alloys, eutectics can form that contain the Nbss and Nb5Si3 phases. The Nb5Si3 can be rich or poor in Ti, the Nb can be substituted with other transition and refractory metals, and the Si can be substituted with simple metal and metalloid elements. For the production of directionally solidified in situ composites of multi-element Nb-silicide based alloys, data about eutectics with Nbss and Nb5Si3 is essential. In this paper, the alloying behaviour of eutectics observed in Nb-silicide based alloys was studied using the parameters ΔHmix, ΔSmix, VEC (valence electron concentration), δ (related to atomic size), Δχ (related to electronegativity), and Ω (= Tm ΔSmix/|ΔHmix|). The values of these parameters were in the ranges −41.9 < ΔHmix <−25.5 kJ/mol, 4.7 < ΔSmix < 15 J/molK, 4.33 < VEC < 4.89, 6.23 < δ < 9.44, 0.38 < Ω < 1.35, and 0.118 < Δχ < 0.248, with a gap in Δχ values between 0.164 and 0.181. Correlations between ΔSmix, Ω, ΔSmix, and VEC were found for all of the eutectics. The correlation between ΔHmix and δ for the eutectics was the same as that of the Nbss, with more negative ΔHmix for the former. The δ versus Δχ map separated the Ti-rich eutectics from the Ti-poor eutectics, with a gap in Δχ values between 0.164 and 0.181, which is within the Δχ gap of the Nbss. Eutectics were separated according to alloying additions in the Δχ versus VEC, Δχ versus <Si>, δ versus <Si>, and VEC versus <Si> maps, where <Si> = Al + Ge + Si + Sn. Convergence of data in maps occurred at δ ≈ 9.25, VEC ≈ 4.35, Δχ in the range ≈ 0.155 to 0.162, and <Si> in the range ≈ 21.6 at.% to ≈ 24.3 at.%. The convergence of data also indicated that the minimum concentration of Ti and maximum concentrations of Al and Si in the eutectic were about 8.7 at.% Ti, 6.3 at.% Al, and 21.6 at.% Si, respectively, and that the minimum concentration of Si in the eutectic was in the range 8 < Si < 10 at.%.
机译:在基于Nb硅化物的合金中,可以形成含有Nbss和Nb5Si3相的共晶。 Nb5Si3的Ti含量可以高或低,Nb可以被其他过渡金属和难熔金属取代,Si可以被简单的金属和准金属元素取代。对于生产多元素Nb-硅化物基合金的定向凝固原位复合材料,与Nbss和Nb5Si3共晶的数据至关重要。在本文中,使用参数ΔHmix,ΔSmix,VEC(价电子浓度),δ(与原子尺寸有关),Δχ(与电负性有关)和Ω( = TmΔSmix/ ||ΔHmix|)。这些参数的值在−41.9 <ΔHmix<-25.5 kJ / mol,4.7 <ΔSmix<15 J / molK,4.33 mix 和VEC之间的相关性。共晶的ΔH mix 与δ的相关性与Nb ss 的相关性相同,前者的ΔH mix 的负相关性更大。 δ与Δχ映射图将富钛共晶与贫钛共晶分开,其Δχ值的差距在0.164至0.181之间,该差距在Nb ss 的Δχ差距之内。根据在Δχ对VEC,Δχ对,δ对和VEC对图中的合金添加分离共晶,其中 = Al + Ge + Si + Sn。地图中的数据收敛发生在δ≈9.25,VEC≈4.35,Δχ在≈0.155至0.162的范围内以及在≈21.6 at。%到≈24.3 at。的范围内。数据的收敛还表明,低共熔物中Ti的最小浓度和Al和Si的最大浓度分别为大约8.7 at。%Ti,6.3 at。%Al和21.6 at。%Si,并且最小浓度共晶中Si的含量在8 <Si <10at。%的范围内。

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