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Quantifying the Performance of P-Type Transparent Conducting Oxides by Experimental Methods

机译:通过实验方法量化P型透明导电氧化物的性能

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摘要

Screening for potential new materials with experimental and theoretical methods has led to the discovery of many promising candidate materials for p-type transparent conducting oxides. It is difficult to reliably assess a good p-type transparent conducting oxide (TCO) from limited information available at an early experimental stage. In this paper we discuss the influence of sample thickness on simple transmission measurements and how the sample thickness can skew the commonly used figure of merit of TCOs and their estimated band gap. We discuss this using copper-deficient CuCrO2 as an example, as it was already shown to be a good p-type TCO grown at low temperatures. We outline a modified figure of merit reducing thickness-dependent errors, as well as how modern ab initio screening methods can be used to augment experimental methods to assess new materials for potential applications as p-type TCOs, p-channel transparent thin film transistors, and selective contacts in solar cells.
机译:用实验和理论方法筛选潜在的新材料导致发现了许多有希望的p型透明导电氧化物候选材料。从早期实验阶段可获得的有限信息很难可靠地评估好的p型透明导电氧化物(TCO)。在本文中,我们讨论了样品厚度对简单透射率测量的影响,以及样品厚度如何使TCO的常用品质因数及其估计的带隙偏斜。我们已经以缺铜的CuCrO2为例讨论了这一点,因为已经证明它是在低温下生长的良好的p型TCO。我们概述了一种改进的品质因数,可减少厚度相关的误差,以及如何使用现代的从头开始筛选方法来增强实验方法,以评估新材料的潜在应用,例如p型TCO,p沟道透明薄膜晶体管,和太阳能电池中的选择性接触。

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