Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
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机译:当前,研究一直集中在环硅烷的印刷和激光结晶上,以使具有卓越性能的多晶硅(poly-Si)薄膜晶体管(TFT)栩栩如生。然而,这些基于硅的油墨的合成通常是复杂且昂贵的。在这里,我们证明了作为硅气及其衍生物的副产品获得的聚硅烷油墨可成功用于室温下通过激光退火合成多晶硅,以及用于n沟道和p沟道TFT。该器件是根据CMOS兼容工艺在350°C下制造的,显示出n型和p型TFT的场效应迁移率分别高达8和2 cm 2 sup> /(V s)。提出的方法将低成本的涂层技术与回收材料的使用相结合,为大面积,柔性甚至一次性/一次性使用的电子设备的方便,可持续生产开辟了道路。
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