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Soft Nondamaging Contacts Formed from Eutectic Ga–Infor the Accurate Determination of Dielectric Constants of OrganicMaterials

机译:由共晶Ga-In形成的软非破坏性接触准确测定有机介电常数用料

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摘要

A method for accurately measuring the relative dielectric constant (εr) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated from eutectic gallium–indium (EGaIn). The geometry of the electrode is defined by injection into microchannels to form stable structures that are nondamaging and that conform to the topology of the organic thin film. The εr of a series of references and new organic materials, polymers, and fullerene derivatives was derived from impedance spectroscopy measurements for both Al and EGaIn electrodes showing the specific limitations of Al with soft, organic materials and overcoming them with EGaIn to determine their dielectric properties and provide realistic values of εr.
机译:描述了一种用于精确测量软有机材料薄膜的相对介电常数(εr)的方法。通过使用由共晶镓铟铟(EGaIn)制成的电极,可以缓解使用最常见的顶部电极热铝原子轰击这些材料的影响。电极的几何形状是通过注入微通道来定义的,以形成稳定的结构,这些结构无损且符合有机薄膜的拓扑结构。一系列参考文献和新的有机材料,聚合物和富勒烯衍生物的εr来源于对Al和EGaIn电极的阻抗谱测量,显示了铝在柔软的有机材料中的特定局限性,并通过EGaIn克服了这些缺陷以确定其介电性能并提供εr的实际值。

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