硅双晶结高温超导直流量子干涉器件

摘要

The preparation and properties of high-Tc YBCO DC-SQUIDs on silicon bicrystal substrate　are studied.YSZ and CeO2 buffer layers,YBCO superconducting thin film and non-superconducting YBCO passivation layer are in-situ deposited on substrate by pulsed laser deposition technique. The critical temperature of the superconducting film is about 88?K. The prepared bicrystal junction using laser technique is of the typical RSJ-like characteristics with its IcRN products of 150?μV at 77 K and Fraunhofer-diffraction-like Ic(H) characteristics. The realized DC-SQUIDs have the voltage-flux transfer function of 4.835?938?GV/Wb and noise of 136．478 16 zWb/Hz1/2 at white noise region and 299.838?39?zWb/Hz1/2 at 1?Hz respectively.%研究了在硅双晶基片上制备高临界温度(Tc)，YBa2Cu3O7 （YBCO）直流量子干涉器件(DC-SQUID)工艺及其特性。采用脉冲激光沉积技术在Si (100)双晶基片上原位制备钇稳定氧化锆(YSZ)、CeO2隔离层、YBCO超导薄膜及非超导YBCO钝化层，超导薄膜临界温度为88?K。采用激光技术直接成型的硅双晶结符合典型电阻分路结RSJ模型，其IcRN　值在77?K下可达到150?μV，具有Fraunhofer衍射状的Ic(H)特性。所实现的DC-SQUID器件电压-磁通传输函数达4.835?938?GV/Wb，白噪声区及1?Hz下的噪声水平达136．478?16?zWb/Hz1/2和299.838?39?zWb/Hz1/2。