悬臂梁接触式RF MEMS开关的关键工艺研究

摘要

采用厚度为2μm的Au制作成共平面波导(CPW)、聚酰亚胺作为牺牲层、PECVD法淀积Si3N4薄膜作为悬臂梁,制作成悬臂梁接触式RF MEMS开关.着重对开关的关键工艺--CPW的Au剥离工艺和悬臂梁制作工艺进行研究,讨论了工艺中存在的问题及其解决方法.通过实验获得较佳的工艺参数,并制作出驱动电压为12～20 V的悬臂梁接触式RF MEMS开关.%Co-planar wave-guide is coated with 2|xm thick Au film. Polyimide is used as sacrificial layer. Si_3N_4 suspending membrane is grown by plasma enhanced chemical vapor deposition ( PECVD). RF MEMS switch with cantilever structure is fabricated by the above processes. The key fabrication technology of RF MEMS switch is discussed including lift-off technology of Au film as co-planar wave-guide and fabrication process of suspending membrane. The optimum process parameters are obtained by different experiments. RF MEMS switch with cantilever structure with 12 ～20 V actuation voltage is sucessfully fabricated.