硅基高通量单细胞阵列芯片制备与研究

摘要

采用微机电系统(MEMS)技术结合金属辅助化学腐蚀工艺制作出关键结构为纳米氧化硅的阵列芯片,细胞可以定点黏附在纳米氧化硅上.通过实验计算和分析得知,在0.7~23μm内,纳米线长度约为3μm时深宽比适宜,有利于黏附蛋白充分铺展,黏附效率达到最高85%.改变培养时间(5~480 min)和细胞浓度(0.5~4.0),发现培养时间在不低于4 h,细胞浓度在1.5时,由于伪足充分缠绕于纳米线上,阵列饱和度达到最高83%.实验结果表明:制作出的单细胞阵列芯片具有较高的黏附效率和阵列饱和度,达到了高通量的标准.%Array chip with key structure of SiO2 is prepared based on MEMS technology. Cells can adhere to SiO2 directly. Cell adhesion efficiency reach the highest value of 85% at 3μm in the range of 0. 7~23μm,because appropriate aspect ratio can enhance the twine between cellular pseudopod and nanowires. Single cell array saturation is analyzed on different incubation time and cell concentration respectively. And the saturation reach highest value of 83% when incubation time is at least 4h and cell concentration is 1. 5,because the sufficient interaction between cellular pseudopod and nanowires. Experimental result shows the produced array chip of single cell has higher cell adhesion efficiency and array saturation which meet the standard of high throughput.