Application of Combined α-RBS and PIXE Analysis Technology

摘要

An analysis technique combining RBS with PIXE technology by x-particles incident beam was constructedand applied to analyse light impurities in heavier substrates.It can run in measuring Rutherford backscatteringand X-ray spectra in random and channeling mode,simultaneously.Being used to analyse sulphur atoms im-planted into GaAs single crystals,this method is relatively simple and quick-operating.It is especially useful foranalysing light impurities in semiconductor compounds,optoelectronic and microwave materials.