The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gainβ decreases with increasing dose; increase of Ib - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT;β increases with Vbe or Ib, but decreases at Ib ＜ 0.25 mA with Ib, and congregates at higher dose; and a damage factor d(β) is much less at the same dose for SiGe HBT than for Si BJT. SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic - Ic0,Ib - Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed.
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