Direct chemical vapor deposition growth of graphene on Ni particles using solid carbon sources

摘要

Graphene has attained a considerable amount of popularity as an attractive ultra-thin reinforcement for nickel(Ni)matrix composites in recent years.However,its excellent reinforcement efficiency is suffered from the agglomeration of graphene nanosheets in manufacturing process and the poor bonding strength of graphene with Ni matrix.To overcome these two problems,one of the efficient strategies is to in-situ grow graphene reinforcements on Ni particles for powder metallurgy.This work aims to synthesize uniform graphene@Ni composite particles by using polymethyl methacrylate(PMMA)as the solid sources for chemical vapor deposition(CVD)process.The results demonstrate that few-layer or multilayer graphene with different morphologies can be grown on the particles by controlling the PMMA content and annealed temperature,respectively.The optimum condition for the formation of high-quality few-layer graphene is 1.0 mg·ml^(-1) PMMA and 900℃.A competition mechanism rises from the growth kinetic,and the spatial confinement effect has led to the formation of graphene with different microstructures and morphologies.