入射能量对H2+与SiC表面相互作用影响的分子动力学模拟

摘要

用分子动力学方法研究了入射能量对 H2+与 SiC 样品表面相互作用的影响.模拟结果表明,在 H2+轰击 SiC 样品表面的初始阶段,样品中 H 原子的滞留量增加较快,其后,增加的速率减慢,并逐渐趋于饱和.入射能量越大,样品中 H 原子的滞留量也就越大.样品在 H2+的轰击下,样品 Si、C 原子会发生刻蚀.入射能量越大,Si 和 C 原子的刻蚀量越大.在相同入射能量下,Si 原子的刻蚀量大于 C 原子.生成的产物中,以 H,H2和 SiH4为主;产物 H2的量随着能量的增加而减小.其他产物随着入射能量的增加而增加.%Molecular dynamic simulations were performed to study H2+ ions bombarding SiC with incident energies of 1, 5, 10 and 15eV. The simulated results show that the retention of H atoms on the surface increases with increasing energy. During the initial stage, the amount of retention H atoms sharply increases and then the retention of H atoms reaches saturation. Si and C atoms are removed from the surface with energies of 10 and 15eV. The number of removed Si atoms is larger than that of C atoms. For the products, H, H2 and SiH4 are dominant. And with increasing incident energies, the number of H2 species decreases and the other species increase.