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Nickel oxide for inverted structure perovskite solar cells

             

摘要

The emergence of inverted perovskite solar cells(PSCs) has attached great attention derived from the potential in improving stability. Charge transporting layer, especially hole transporting layer is crucial for efficient inverted PSCs. Organic materials were used as hole transporting layer previously. Recently, more and more inorganic hole transporting materials have been deployed for further improving the device stability. Nickel oxide(NiOx) as p-type metal oxide, owning high charge mobility and intrinsic stability,has been widely adopted in inverted PSCs. High performance over 20% efficiency has been achieved on NiOx base inverted PSCs. Herein, we have summarized recent progresses and strategies on the NiOx based PSCs, including the synthesis or deposition methods of NiOx, doping and surface modification of NiOx for efficient and stable PSCs. Finally, we will discuss current challenges of utilizing NiOx HTLs in PSCs and attempt to give probable solutions to make further development in efficient as well as stable NiOx based PSCs.

著录项

  • 来源
    《天然气化学(英文版)》 |2021年第1期|393-411|共19页
  • 作者单位

    Faculty of Physics and Electronic Technology Hubei University Wuhan 430062 Hubei China;

    Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China;

    Faculty of Physics and Electronic Technology Hubei University Wuhan 430062 Hubei China;

    Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China;

    Faculty of Physics and Electronic Technology Hubei University Wuhan 430062 Hubei China;

    Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China;

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