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Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

机译:具有抑制暗电流和提高检测能力的异质结构石墨烯量子点/ WSe2 / Si光电探测器

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摘要

A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition.The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107.Under illumination,the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation.The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes.The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ~707 mA.W-1,short response time of 0.2 ms,and good specific detectivity of ~ 4.51 x 109 Jones.These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors.
机译:通过将n型Si衬底与通过物理气相沉积获得的p型单层WSe2结合形成高性能异质结光电探测器.WSe2 / Si异质结的高质量通过抑制1 nA的暗电流和极高的暗电流表现出整流比高达107.在光照下,异质结表现出从紫外线到近红外辐射的宽光响应范围。石墨烯量子点(GQD)的引入极大地提高了异质结的光检测能力,具有强光吸收性和长载流子寿命。 GQDs / WSe2 / Si异质结具有较高的响应度,约为707mA。W-1,响应时间短,为0.2 ms,比探测性良好,约为4.51 x 109 Jones。这些性质表明GQDs / WSe2 / Si异质结保持在未来的高性能光电探测器中具有巨大的应用潜力。

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  • 来源
    《纳米研究(英文版)》 |2018年第6期|3233-3243|共11页
  • 作者单位

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

    Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100084, China;

    Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100084, China;

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

    Department of Chemistry, Tsinghua University, Beijing 100084, China;

    Institute of Functional Nano & Soft Materials(FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices,Soochow University, Suzhou 215123, China;

    Institute of Functional Nano & Soft Materials(FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices,Soochow University, Suzhou 215123, China;

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

    Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University,Beijing 100084, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-19 03:47:27
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