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An additive dripping technique using diphenyl ether for tuning perovskite crystallization for high-efficiency solar cells

机译:使用二苯醚的滴加技术可调节钙钛矿的结晶,以用于高效太阳能电池

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摘要

Controlling the morphology of the MAPbI3-xClx active layer has remained a challenge towards advancing perovskite solar cells (PvSCs). Here, we demonstrate that a low temperature additive dripping (AD) treatment step, using diphenyl ether (DPE), can significantly improve the power conversion efficiency (PCE), compared to the control device using chlorobenzene (CB), by 15% up to 16.64%, with a high current density (Jsc) of 22.67 mA/cm2. We chose DPE for its small and appropriate dipole moment to adjust the solubility of the MAPbI3-xClx precursor during the formation of the intermediate phase and the MAPbI3-xClx phase. The low DPE vapor pressure provides a longer processing window for the removal of residual dimethylformamide (DMF), during the annealing process, for improved perovskite formation. Imaging and X-ray analysis both reveal that the MAPbI3-xClx film exhibits enlarged grains with increased crystallinity. Together, these improvements result in reduced carrier recombination and hole trap-state density in the MAPbI3-xClx film, while minimizing the hysteresis problem typical of PvSCs. These results show that the AD approach is a promising technique for improving PvSCs.
机译:控制MAPbI3-xClx活性层的形态仍然是推进钙钛矿太阳能电池(PvSCs)的挑战。在此,我们证明,与使用氯苯(CB)的控制装置相比,使用二苯醚(DPE)的低温添加剂滴落(AD)处理步骤可以显着提高功率转换效率(PCE)。 16.64%,具有22.67 mA / cm2的高电流密度(Jsc)。我们选择DPE的原因在于其较小且合适的偶极矩,以在形成中间相和MAPbI3-xClx相的过程中调节MAPbI3-xClx前体的溶解度。低DPE蒸气压为退火过程中残留的二甲基甲酰胺(DMF)的去除提供了更长的处理窗口,从而改善了钙钛矿的形成。成像和X射线分析均显示MAPbI3-xClx膜的晶粒增大,结晶度增加。总之,这些改进可降低MAPbI3-xClx膜中的载流子复合和空穴陷阱态密度,同时将PvSC的典型滞后问题降至最低。这些结果表明,AD方法是改善PvSC的有前途的技术。

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  • 来源
    《纳米研究(英文版)》 |2018年第5期|2648-2657|共10页
  • 作者单位

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

    Department of Chemical and Environmental Engineering, Yale University, New Haven CT06511, USA;

    Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;

    Department of Chemical and Environmental Engineering, Yale University, New Haven CT06511, USA;

    Department of Chemical and Environmental Engineering, Yale University, New Haven CT06511, USA;

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

    Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

    Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

    Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;

    Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;

    Department of Chemical and Environmental Engineering, Yale University, New Haven CT06511, USA;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-19 03:47:26
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