几种新型非易失存储器的原理及发展趋势

摘要

The article introduces the principle of such nonvolatile memorirs as FRAM (Ferroelectric Random Access Memory ), PRAM (Phase Change Random Access Memory ), MRAM (Magnetic Random Access Memory ),RRAM (Resistive Random Access Memory ),etc.,and compares their performance.Finally,it makes an analysis on them for the existing problems and the development trend.%介绍几种有发展潜力的新型非易失存储器的原理，如铁电存储器、磁性随机存储器、相变存储器和阻变存储器等，并在性能方面作了对比，最后对存在的问题和发展趋势进行了分析。