电子束蒸发法制备Co/Ru多层膜的微观结构与磁电阻

摘要

The Co/Ru multimembranes with different thickness of Co layer were prepared by electron beam vapor deposition. XRD, HRTEM and TEM were employed to investigate the microstructure of the multimembranes. The effect of microstructure on magnetic properties and the magneto-resistor origin mechanism of Co/Ru multimembranes were discussed. The results show that the thickness of Co layer has great effect on the microstructure and magneto-resisitor properties of the multimembranes. When the thickness of Co layer is more than 0.8 nm, the growth of multimembranes follows Frank-van der Merwe mode while the crystallinity is better with the thickness of the Co layer increase, and the multimembranes show negative magneto-resistance effect;when the thickness of Co layer is less than 0.5 nm, the growth of multimembranes follows Volmer-Weber mode and the multimembranes show positive magneto-resistance effect due to the asymmetry interface.%采用电子束蒸发法制备具有不同Co层厚度的Co/Ru多层膜。采用X射线衍射(XRD)、高分辨透射电镜(HRTEM)、扫描电镜(TEM)等对多层膜的微观结构进行观察与分析，研究多层膜微观结构对多层膜磁阻性能的影响，并探讨多层膜磁阻的产生机理。结果表明：Co层的厚度tCo对于薄膜的微观结构和磁阻性能有很大影响，当tCo≥0.8 nm时Co/Ru多层膜以层状方式连续生长，且tCo越大，薄膜结晶越完整，薄膜呈现负磁阻效应；当tCo=0.5 nm时，Co/Ru多层膜为岛状生长，Co/Ru界面的不对称性使得薄膜出现正磁阻效应。