The As-rich(2×4) to In-rich(4×2) transition phenomenon was discussed when grew InAs on InAs (001) substrate through molecular beam epitaxy method. A good As-rich(2 × 4) surface was formed by controlling the growth parameters. In the absence of sufficient As pressure, raise the temperature of substrate slightly will lead to the sample surface gradually turn to the In-rich(4 ×X 2) surface structure and appear to be (3×1) mixed phase. Through experimental analysis and software simulation it showed that the area of (4 × 2) structure has covered up to 90%, indicating that the majority of the sample surface has been metallized.%论述了利用分子束外延方法在InAs(001)基片上生长InAs时,样品表面由富As的(2×4)向富In的(4×2)转变的现象.通过控制生长参数生长出了较好的富As(2×4)表面.在As压不足的情况下,轻微的提升样品衬底温度,样品表面逐渐转向富In表面的(4×2)结构,呈现出(3×1)混合相.通过实验分析及软件模拟确定表面(4×2)结构区域已覆盖多达90％,表明样品表面大部分已金属化.
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