采用传统固相合成法制备了Pb0.97-xLa0.02BaZr0.55Sn0.38Ti0.07O3 (x=0,0.09,0.11,0.13,物质的量分数)反铁电陶瓷,研究了钡掺杂量对该陶瓷微观结构、介电性能和储能特性的影响.结果表明:钡能掺入到陶瓷晶格中形成钙钛矿结构;随着钡掺杂量的增加,陶瓷的反铁电-顺电相变温度降低,介电常数增大;当x =0.09时,室温下施加5.4 kV·mm-1的电场,陶瓷的储能密度为0.7 J·cm-3,应用电场强度比文献报道的低,说明钡的添加降低了陶瓷的应用电场强度;陶瓷的储能特性与钡掺杂量呈线性关系.%Pb0.97-xLa0.02BaxZr0.55Sn0.38Ti0.07O3 (x =0,0.09,0.11,0.13,mole fraction) antiferroelectric ceramics were synthesized by conventional solid state reaction method,and then the effects of Ba doping concentration on the microstructure,dielectric property and energy storage property of the ceramics were studied.The results show that Ba was capable of diffusing into the ceramic lattices to form a perovskite structure.With the increase of the Ba doping concentration,the antiferroelectric-paraelectric phase transition temperature of the ceramics decreased while the dielectric permittivity increased.The energy storage density of the ceramics at 5.4 kV· mm-1 reached 0.7 J·cm 3 with x value of 0.09.The applied electric field intensity was lower than that reported in literatures,indicating that the doped Ba can decrease the applied electric field intensity.The relationship between Ba doping concentration and the energy storage property of the ceramics was linear.
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