半空间方法在检测基片镶嵌缺陷粒子中的应用

摘要

为了更好地诊断出基片无损检测工作中缺陷粒子姿态的详细信息,使用三波技术给出了半空间问题相应的连接边界条件,利用互易性定理简化近远场外推中的场变换过程,给出了一种有效的计算基片与镶嵌缺陷粒子散射方法.在数值计算中与矩量法(MOM)进行了比较,得到了p偏振和s偏振下镶嵌Cu和SiO2球体缺陷粒子的微分散射截面和电场分布.研究结果表明:介质缺陷的微分散射截面的值小于同条件下金属缺陷粒子的值.在应用中可通过分析p偏振场值分布特点反演缺陷特征值.%The connection boundary condition is given by three waves method for analyzing the detailed information of defect particles in substrate nondestructive testing work. The reciprocity theorem is applied to simplify the field transformation procedure in near-far field extrapolation. An effective method calculating the composite scattering of wafer and inlaid defect particle is represented. Compared with MOM method, the validity is proved. The differential scattering cross section (DSCS) and field distribution of the inlaid Cu and SiO2 particles by p polarization and s polarization are obtained. The results indicate that DSCS of the dielectric are smaller than the metal on the same conditions. In the application, the p polarization field distribution should be analyzed to invert characteristics of defect particle.