Z nS 离子束抛光过程中的粗糙度演变

摘要

为了得到离子束抛光ZnS的工艺参数，采用微波离子源作为抛光源，分析了离子束能量、离子束流大小、离子束入射角度对ZnS刻蚀速率及表面粗糙度的影响，比较了ZnS刻蚀速率及表面粗糙度的变化趋势．研究结果表明：当离子束能量为400 eV、离子束流大小为35 mA、入射角度为45°时，ZnS表面粗糙度降低了0．23 nm ．%In order to obtain parameters of ZnS by ion beam polishing ,the polishing source puts to use a microwave ion .The variation curves of etching rate and surface roughness of ZnS are compared by analyzing factors ,including the energy of the ion beam ,ion beam current density and ion beam incident angle .T he results show that w hen the energy of ion beam is 400 eV ,the current density of ion beam is 35 mA and incident angle is 45° ,surface roughness of ZnS decreases maximally 0 .23 nm .