A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate

摘要

In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitutional accepter and donor concentration up to NA=5.0×10^17 cm^-3 and ND=9.0×10^16 cm^-3 for deep ultraviolet lasing was achieved.The structure was assumed to be grown over bulk AIN substrate and operate under a continuous wave at room temperature.Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region,there is still a shortage of investigation about the ternary BGaN in aluminum-rich AIGaN alloys.Based on the simulation,an average local gain in quantum wells of 1946 cm^-1,the maximum emitted power of 2.4 W,the threshold current of 500 mA,a slope efficiency of 1.91 W/A as well as an average DC resistance for the V-I curve of(0.336Ω)had been observed.Along with an investigation regarding different EBL,designs were included with tapered and inverse tapered structure.Therefore,it had been found a good agreement with the published results for tapered EBL design,with an overweighting for a proposed inverse tapered EBL design.