SYNTHESIS OF TiN FILM WITH ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES

摘要

The TiN films were synthesized with an alternate process of depositing titanium from a E-gunevaporation source and 40 keV N^+ bombarding onto the target.It is shown from the composi-tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffractionspectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40nm and without preferred orientation,the nitrogen content in the film is much less than that incase without N^+ bombarding,and an intermixed region about 40 nm thick exists between thefilm and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica,Shanghai 200050。