Ti-Pd-Ni thin films were prepared by sputter deposition at room temperature. The as- deposited thin films were crystallized at 750℃ followed by various cooling conditions, and the structural change emerged in the films was characterized by means of both X-ray diffraction (XRD) and differiantial scanning calorimetry (DSC). It was found that the phase transformation temperatures of Ti50.6Pd30Ni19.4 ingot are much higher than those of its thin film. The B19’ and B19 phases coexisted, together with the Ti2 Ni and Ti2Pd type of precipitates at the room temperature. Both the B19-B2 one- stage and the B19’-B19-BY2 two-stage phase transformations took place when the films experienced thermal change across the region of phase transformation temperatures.
展开▼
机译:Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor