紫外脉冲激光淀积法制备Pb(Ta0.05Zr0.48Ti0.47)O3薄膜的铁电性质

摘要

用紫外脉冲激光淀积方法在Pt／TiO2／SiO2／Si(001)衬底上制备了La1-xSrxCoO3／Pb(Ta0.05Zr0.48Ti0.47)O3(PTZT)／La1-xSrxCoO3异质结构薄膜。发现底电极La0.25Sr0.75CoO3可以诱导PTZT薄膜沿(001)方向取向生长。在500kHz和5V的工作电压下铁电电容器La0.25Sr0.75CoO3/PTZT／La0.25Sr0.75CoO3经过5×1010次反转之后，仍保持其初始电极化的96％。此异质结构横截面的扫描电镜照片表明界面上没有明显的因化学反应导致的第二相存在。%The heterostructures of La1-xSrxCoO3/Pb (Ta0.05Zr0.48Ti0.47)O3(PTZT)/La1-xSrxCoO3 rnhave been deposited on Pt/TiO2/SiO2/Si(001) substrates by pulsed laser deposition. It was observed that PTZT films were mainly oriented along (001)-direction. The ferroelectric capacitor La1-xSrxCoO3/Pb(Ta0.05Zr0.48Ti0.47)O3(PTZT)/La1-xSrxCoO3 retained its polarization as about 96％ of its initial value after 5×1010 switching cycles at an applied voltage 5 V and a frequency 500kHz. SEM cross-sectional morphology of the heterostructures and RBS backscattering spectrum showed that no obvious interdiffusion exist on the inter face.