铋膜电极阳极溶出伏安法检测痕量Cd金属

摘要

The stripping current arising from the oxidation of Cd was related to the concentration of Cd2+in the sample.This study presents the determination of Cd (II) at low concentrationμg/L levels by square wave anodic stripping voltammetry (SWASV) on an activated bismuth-film electrode (BFE).The electrode was initially modified by an electrochemical method, and then the electrodeposited bismuth-film was prepared again to improve the electrode, thereby enhancing the sensitivity to trace amounts of target Cd2+.The surface of glassy carbon electrode (GCE) before and after modification was characterizad by SEM, CV, EIS, and SWV.The parameters for the determination of the Cd2+were investigated with the view of its application toward real samples containing low concentrations of Cd2+.Using the selected conditions, the limit of detection is 1μg/L for Cd2+at a preconcentration time of10 min.%镉氧化产生的溶出电流与样品中Cd2+的浓度有关.本研究通过方波阳极溶出伏安法(SWASV)在活化铋膜电极(Activated BFE)上对低浓度μg/L水平的Cd(II)进行测定.通过电化学方法对电极进行初步改性,然后电沉积制备铋膜再次对电极进行改进,从而增强了对痕量目标Cd2+的敏感性.对改性前后的玻碳电极(GCE)表面进行SEM、CV、EIS和SWV的表征.为了将这种伏安法传感器应用于含有低浓度Cd2+的实际样品中,对检测Cd2+的实验参数进行了研究.使用选定的条件,在10 min的预富集条件下Cd2+的检测限为1μg/L.