RuO2 film electrodes were prepared by rotation coating method. SEM indicated film thickness is 7.7～8.0μm and the average of adhesion for the film is 18.00MPa through tensile experiment. XRD microstructure analysis shows the thin film ideal annealing temperature is 270℃. Addition, electrochimica experiment indicated excellent cyclic voltammetry and chronoamperometry and impedance of thin film. The thin film specific capacitance and energy dencity power density and inner resistance are 705.3F/g, 141.05Wh/kg,0.41kW/kg,0.4365fΩ,respectively.%采用旋转涂覆工艺制备了RuO2薄膜电极,SEM揭示了RuO2薄膜的厚度为7.7-8.0/μm,拉伸实验测试得该薄膜附着力的平均值为18.00MPa;XRD结构分析表明该薄膜的最理想烧结温度为270℃.此外,进一步的电化学性能测试表明RuO2薄膜的循环伏安、充放电及阻抗性能优良,该薄膜电极的比电容Cp、能量密度W、功率密度P及内阻ESR分别为705.3F/g、141.05Wh/kg、0.41kW/kg、0.436Ω.
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