化学水浴沉积制备三维V2O5薄膜电极及其电容性能

摘要

V2O5 film was directly grown on Ni foam substrate by a facile chemical bath deposition method.The morphology and structure of as-prepared V2O5 film was conducted by SEM and XRD,and the specific surface and pore distribution were measured by nitrogen adsorption and desorption measurements.The orthorhombic V2O5 presents three-dimensional flower-like porous microstructure with BET area of 68.7 m2/g and average pore diameter of 7.2 nm.The electrochemical performance of V2O5 film electrode in 3 mol/L KNO3 solution was investigated by cyclic voltammetry,electrochemical impedance spectroscopy and galvanostatic charge/discharge measurements.The results demonstrates that the 3D flower-like microstructure and large pores shows excellent pseudocapacitance behavior and good stability,delivering capacitances of 392,338 and 276 F/g in 3 mol/L KNO3 at current densities of 1,2 and 3 A/g,respectively.%采用化学水浴沉积法在泡沫镍表面原位生长V2O5薄膜,以扫描电子显微镜(SEM)和X射线衍射(XRD)表征电极的形貌和晶体结构,采用氮气物理吸脱附测量样品的比表面和孔分布.形成的斜方晶系V2O5呈现三维花状形貌,比表面和平均孔径分别为68.7 m2/g和7.2 nm.采用循环伏安、交流阻抗和恒流充放电技术考察了V2O5薄膜电极在3 mol/L KNO3溶液中的电化学电容性能.结果表明,三维花状结构形成的较大的比表面和大孔隙使得电极具有较好的赝电容性能,在电流密度为1,2和3 A/g时比电容分别达到392,338和276 F/g,且具有良好的循环稳定性.