Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films

摘要

Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates,respectively,at room temperature,using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO 3 solution.A conventional three-electrode cell was used with a platinum sheet as a counter electrode,and a saturated calomel electrode was used as a reference electrode.The films were annealed in argon atmosphere.The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated.X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi 2 Se 3,and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi 2 Se 3.