首页> 中文期刊> 《中医药信息》 >电针百会、风府穴对学习记忆障碍大鼠Bcl-2/Bax基因表达的影响

电针百会、风府穴对学习记忆障碍大鼠Bcl-2/Bax基因表达的影响

         

摘要

目的:研究电针百会、风府穴对学习记忆障碍大鼠脑组织神经细胞凋亡及Bcl -2、Bax基因表达的影响,探讨其改善学习记忆障碍的机制以及对脑组织神经元的保护作用.方法:随机将48只雄性Wistar大鼠分为假手术组、模型组、电针组和西药组.采用D-半乳糖腹腔注射合并脑内双侧Meynert鹅膏草氨酸注射的方法制做复合型学习障碍模型,运用电针百会、风府穴的方法进行治疗.结果与结论:电针百会、风府穴能够通过提高Bcl -2基因表达的途径抑制细胞凋亡,保护脑内神经元,进而改善大鼠的学习记忆能力.%Objective: To study the effect on apoptosis and Bel - 2/Bax protein gene expression in cognitive dysfunction rats with the method of acupuncturing Baihui (GV20) and Fengfu (GV16) points. Method;48 health-y Wistar rats were randomly divided into control group,model group,medication group and acupuncture group. The animal models were established by poritoneal injection of D - galactose for six weeks combined with ibo-tenic acid injection into bilateral nucleus basalis of Meynert. Treated with acupuncture Baihui (GV20) and Fengfu (GV16) points. Conclusion: Acupuncturing Baihui (GV20) and Fengfu (GV16) points can cause the inhibition of apoptosis and protect the hippocampal neurons by promoting expression of Bcl - 2 gene, and then improve the rats' ability of learning and memory.

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