0.13μm铜连线技术中的双镶嵌刻蚀工艺中的电荷效应研究

摘要

在0.13μm铜连线技术节点上,双镶嵌等离子体刻蚀的优化是最具有挑战性的问题之一.通过理论模型分析和实验对双镶嵌结构的刻蚀技术进行了研究.解释了等离子体电荷累积过程.提出了一个简化的模型并进行了定性的计算.模型和实验的结果表明:通过对等离子体刻蚀参数的优化可以产生一个能减少底部防反光层的围墙式缺陷的刻蚀剖面.%At copper-line of 0.13 μ m technology node, one of the most challenge is to optimize the etch process for DD (dual damascenes) structure. In the present paper, the etch technology on DD test structure have been studied through model and experiment analysis. The effect of charge accumulation from plasma etch process is explained. A simplified model is proposed and qualitative calculation is conducted, Finally, a favorable BARC (bottom-anti-reflected-coating) etch profile to reduce fencing defect is achieved through plasma parameter optimization based on model results.