高压IGBT表面钝化技术的研究进展

摘要

The high voltage power semiconductor device IGBT(Insulated Gate Bipolar Transistor) surface passivation process is an important part of the chip process technology. The quality of passivation layer directly affects the performance and the reliability of IGBT devices. In order to solve the problem of high voltage IGBT surface passivation process, the passivation mechanism of power semiconductor devices is studied. Then, the advantages and disadvantages of the commonly used surface passivation materials of power devices and the mainstream surface passivation schemes of high voltage power devices are investigated, the surface passivation materials and the surface passivation scheme for high voltage IGBT is analyzed and summarized. Finally, the developing trend and research direction of high voltage IGBT surface passivation technology are pointed out.%高压功率半导体器件IGBT(绝缘栅双极晶体管)的表面钝化工艺是其芯片加工工艺的重要环节，其钝化层的质量直接影响IGBT器件的性能参数和长期可靠性。为了解决高压IGBT的表面钝化工艺问题，首先研究了功率半导体器件的钝化机理，随后调研了功率器件常用表面钝化材料的优缺点和国际上主流的高压功率器件表面钝化方案，分析总结出了适用于高压IGBT的表面钝化材料和表面钝化方案，最后指出了高压IGBT表面钝化技术的发展趋势和今后的研究方向。