氮化镓外延用硅衬底问题研究

摘要

With the continuous development and breakthrough of silicon-based gallium nitride epitaxial technology, the localization of its special silicon substrate is becoming more and more important. Analyze the intensive edge slip line and split problem after GaN epitaxial on localization substrate. Put forward the wafer edge control and mechanical strength control parameters and technical indicators. Point out the direction of high quality silicon substrate development for power component level of GaN epitaxy.%随着硅基氮化镓外延技术的不断突破,其专用的硅衬底材料的国产化问题日益凸显.分析了国产片外延后边缘滑移线密集和裂片问题,提出了硅片边缘控制和机械强度控制参数和技术指标,为满足功率器件级氮化镓外延需求的高质量硅衬底研制指明了一定的方向.