MTM反熔丝单元编程特性研究

摘要

主要研究了编程参数对MTM反熔丝单元编程特性的影响，包括编程电压、编程电流、编程次数等。结果表明在满足最低编程电压条件下，编程电压的增大对反熔丝编程电阻无显著影响。编程电流对编程电阻的影响较大，编程电流越大，反熔丝编程电阻越小。编程次数的增多可减小编程电阻，但离散性增大。%The paper mainly studies the factors that affect the characteristics of metal to metal antifuse cell, such as programming voltage, programming current, and the number of programming times. The results shows that increasing the programming voltage has no signiifcant effect on the on-state resistance, programming current has a signiifcant impact on the on-state resistance, the-on state resistance decreases as the programming current increases. In addition, the on-state resistance decreases with the increases of the programming times, but the dispersion increases.