采用溶胶-凝胶法在玻璃衬底上制备TiO2多孔薄膜,掺杂不同功函数的金属离子制备M-TiO2纳米薄膜电极,XRD、AFM,UV-Vis检测M-TiO2结构、形貌和性能.结果表明:掺杂摩尔分数2%的金属离子没有改变TiO2的晶格结构,但其吸收峰在可见光区都发生明显的红移,禁带宽度降低,掺杂后的M-TiO2电极比没有掺杂的TiO2电极更适合做染料敏化太阳能电池的光阳极,特别是Mg-TiO2和Ni-TiO2电极的禁带宽度分别达到2.19 eV和2.09 eV,与非晶硅的禁带宽度1.70 ev相近.%TiO2 thin films and TiO2 thin films doped with different performance function metal ions(M-TiO2) were prepared on glass substrates by sol-gel method. The structure, morphology and properties of TiO2 thin films were investigated by XRD, AFM and UV-Vis spectroscopy. The results show that doping 2％ (mole fraction) metal ions does not change the lattice structure of TiO2 but their absorption peaks can significantly produce red shift in visible light region and the energy band gap decrease, so that M-TiO2 thin films are better than TiO2 thin films for dye-sensitized solar cells anode.The energy band gap of Mg-TiO2 and Ni-TiO2 are 2.19 eV and 2.09 eV respectively, which are close to 1.70 eV of amorphous silicon.
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