Study on Lattice Parameter Variance and Eutectic Reaction during Crystal Growth of Nd,Cr∶GSGG by Czochralksi Method

摘要

During the crystal growth of Nd, Cr∶GSGG by Czochralski method, in some cases eutectic reaction occurred in the nether region of the crystal, and the boule was divided into two obvious different parts, which is upper Nd,Cr∶GSGG crystal and the nether coexisting Nd,Cr∶GSGG and GdScO3. By X-ray powder diffraction, the structure change of NdCr∶GSGG crystal of Φ 27 mm×120 mm with eutectic along its grown direction was studied. By the least square method and extrapolation function f=sinθ-sinθ1-t(t is an adjustable parameter), the lattice parameters of Nd,Cr∶GSGG and additional GdScO3 phase were computed. The results indicate that the lattice parameters of Nd,Cr∶GSGG increase along its growth direction, which changes from a=(1.25650±0.00007) nm of the top to (1.25798±0.00010) nm of the bottom. In the process of Nd,Cr∶GSGG growth, Gd3+ in Nd,Cr∶GSGG is partly replaced by Nd3+ with larger ionic radii, and the volatilization of Ga component results in its composition variance, which cause the lattice parameters increase along growth direction. In the eutectic section, there are the Nd,Cr∶GSGG and the second phase orthorhombic GdScO3. The lattice parameters of GdScO3 are a=0.5443±0.0007, b=0.5699±0.0005 and c=(0.7865±0.0009) nm, and that of Nd,Cr∶GSGG is (1.25798±0.00010) nm. In the final growth stage, excessive volatilization of Ga composition during the crystal growth causes the growth melt deflect of the Nd,Cr∶GSGG solid solution range seriously, and results in the eutectic reaction, and the outgrowth of Nd,Cr∶GSGG and GdScO3. So it is necessary to decrease the effect of gallium volatilization during the growth in order to avoid eutectic growth and obtain a high-quality Nd,Cr∶GSGG.