首页> 中文期刊>中国基础科学 >高性能大功率LED研究进展——973计划“高性能LED制造与装备中的关键基础问题研究”项目成果简介

高性能大功率LED研究进展——973计划“高性能LED制造与装备中的关键基础问题研究”项目成果简介

     

摘要

半导体照明取代传统照明仍受制于光效低、成本高、寿命短等问题.这些问题反映在制造领域体现为制造缺陷、核心设备、高效散热、可靠性等关键问题.由深圳清华大学研究院牵头承担的973计划项目(2011CB013100),围绕3个科学问题,设置了大尺寸同质衬底生成及缺陷控制原理与装备实现、大尺寸超硬衬底晶圆平坦化中低缺陷、高效去除的新原理与装备实现、6时及以上大尺寸外延晶圆的跨尺度制造技术和MOCVD核心装备及探索多场耦合下反应腔的几何构造和气体输运方式与工艺参数的关系以及参数检测控制方法、封装装备执行系统的多参数耦合设计及高加速度复合运动生成、LED精简热模及型跨尺度热输运系统集成制造、LED复合过应力加速寿命试验方法及可靠性制约因素耦合规律等方面的研究内容.目标为面向220 lm/W的高性能高可靠的LED制造,揭示LED发光效率、可靠性与制造缺陷及制造因素的关联规律,建立新原理装备、新方法,突破关键技术瓶颈,奠定支撑新一代LED制造技术和产业发展的理论和技术基础,为我国在LED制造装备领域实现跨越式发展,成为国际LED制造的主要生产和创新中心提供支撑.本文从项目研究背景、相关基础理论研究进展以及关键设备研究进展等方面进行全面论述.%Semiconductor illumination to replace the traditional illumination is still enslaved to low light efficiency,high cost,short life and other issues.These problems are caused by manufacturing defects,core equipment,high efficiency heat dissipation,reliability and other key issues in manufacture process level.This program (No.2011CB013100) which was organized and leaded by Research Institute of Tsinghua University at Shenzhen mainly focus on three critical scientific problems and establish six major research directions as follow:1.principle research and equipment realization of large size homoepitaxy substrate growth and defect control;2.new principle research and equipment realization of low defect concentration and high efficiency remove planarization of large size ultra hard substrate;3.6 inches and larger size epitaxial wafer cross-scale manufacture technology and MOCVD equipment,relationship between geometry structure of multi-field coupling reactor chamber,gas transmission mode and manufacture process parameters;4.multi-parameter coupling design of packaging equipment execution system and high acceleration composite motion generation;5.simplified thermal model of LED and integrated manufacturing of cross scale heat transport system;6.composite stress accelerated life test method for LED and coupling law of reliability constraints.The main objective of this project is manufacturing of 220 lm/W high performance and high reliability LED device.Intention to reveal the relationship between luminous efficiency,reliability and manufacturing defects;set up new principles,new methods and new equipment;break through critical bottlenecks of technologies;establish the theoretical and technological foundation of new generation LED manufacture and development;provide support for the striding development in LED manufacture equipment.Making our country to be LED production international manufacture and innovation center.This paper will show a comprehensive discussion from research background,progress of related fundamental theoretical study and research progress of critical manufacture equipment.

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