Because of excellent electronic and optical properties,GaN has been used in the laser diodes,microwave,ultrahigh power switches and other fields.Due to an attractive process for selective region doping of semiconductor devices,ion implantation has widely been applied to GaN fabrication processing.However,ion implantation introduces extensive damage that can degrade the performance,properties as well as lifetimes of the devices.Thus,it is very important to understand the ion-beam damage processes in the fabrication of GaN-based devices.The effects of ion implantation into GaN have been extensively investigated.
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