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Blocker-Tolerant Integrated Tunable Filters in CMOS for Next Generation Wireless Communication

机译:用于下一代无线通信的CMOS中具有耐阻塞性的集成可调滤波器

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摘要

Modern wireless communication standards support numerous frequency bands. A dedicated surface acoustic wave (SAW) filter is assigned to each single band to isolate the desired frequency bands. As a result, multiple SAW filters are necessary to cover different frequency bands which clearly increases cost and form factor. There is a strong demand towards complete integrated solutions to reduce the cost and form-factor of wireless devices. However, it is quite challenging to build integrated high-performance bandpass filters. The inherent losses associated with on-chip inductors lead to filters having relatively high insertion losses, limited dynamic range and low out-of-band rejection. For this reason, nowadays, most wireless systems utilize individual off-chip filters rather than fully integrated bandpass filters.;A cellular radio receiver is required to recover a weak desired signal in presence of other in-band and out-of-band interfering signals (blockers). These interfering signals near the desired signal need to be suppressed. To that end, a band selection filter is used to provide attenuation for out-of-band signals, and a subsequent baseband lowpass channel select filters provide channel selection. Existing filters providing channel selection directly at RF for cellular applications does not have adequate rejection in the stopband to full LTE requirements. In this thesis, several techniques based on N-path filters have been proposed to handle large out-of-band blockers. The ultimate rejection of classical N-path filter is limited due to non-zero switch resistance. A cascaded configuration of bandpass (BP) and bandstop (BS) filter is utilized to create notches on both sides of the passband where the center frequency of bandstop filters are shifted by using feed-forward and feedback gm cell. The filter is tunable from 0.2 GHz to 1.8 GHz. The proposed tunable filter has 48.3 dB rejection at 20 MHz offset and has 58.8 dB rejection at 45 MHz offset from the center frequency. The simulated stop-band rejection of the filter is 71.2 dB. However, it is difficult to create nearby notches without affecting the passband response of the later. To overcome the above difficulty, a new architecture is presented based on two-path signal cancellation technique to create notches close to the passband to handle large blockers. The filter consists of a tunable BPF in parallel with tunable BS filters. Due to the subtraction of BP and BS filters two notches can be created. This combination ensures the correct amplitude and phase relationships across a wide tuning range to create adjustable TZs without sacrificing the gain of the passband. This paper presents in detail the design considerations and guidelines, as well as analysis of the filter performance in the presence of non-idealities such as parasitics and imperfect clock signal shape. The proposed filter is implemented with high-Q N-path filter blocks in a 65-nm CMOS process. The passband of the filter is tunable from 0.1 GHz to 1.4 GHz with a 3-dB bandwidth of 9.8-10.2 MHz, a gain of 21.5-24 dB, a noise figure of 3-4.2 dB, and a total power consumption of 50-73 mW. TZs are created on both sides of the passband with a minimal offset of 25 MHz and are tunable across a 20 MHz range with up to 60 dB rejection. The measured blocker 1-dB compression point is 8 dBm and the out-of-band IIP3 is 23 dBm. The reported filter provides a promising on-chip filtering solution for multi-standard, multi-frequency software-defined radio applications with improved interference mitigation capabilities.;Various on-chip techniques to handle out-of-band blockers have been proposed recently. Although these approaches are suitable for suppressing a single frequency blocker, the created single-frequency notch is not effective in presence of wideband blockers which is becoming more prevalent with the development in high-speed wireless communications. A tunable active bandpass filter with bandwidth-adjustable notches close to the passband for wideband blocker suppression with high attenuation is designed and fabricated. The proposed filter is composed of a 3-pole N-path bandstop filter in cascade with an Npath bandpass filter, where the center frequency of the bandpass filter is offset from the bandstop filters. With proper tuning of the coupling capacitors in the bandstop filter, three adjacent notches can be created which provides a larger suppression bandwidth. An implementation of the filter in 65-nm CMOS exhibits a passband tunable between 0.1-1.1 GHz, with a 3-dB bandwidth of 12.4-14.2 MHz, a gain of 9.5-10.3 dB, a noise figure of 4.3-5.8 dB, and a total power consumption of 40-64.3mW. The blocker 1-dB compression point is 6.5 dBm and the out-of-band IIP3 is 18.4 dBm.
机译:现代无线通信标准支持众多频带。专用表面声波(SAW)滤波器分配给每个单个频段,以隔离所需的频段。结果,需要多个SAW滤波器来覆盖不同的频带,这明显增加了成本和外形尺寸。对于降低无线设备的成本和外形的完整集成解决方案存在强烈的需求。但是,构建集成的高性能带通滤波器非常具有挑战性。与片上电感器相关的固有损耗导致滤波器具有较高的插入损耗,有限的动态范围和较低的带外抑制。因此,当今,大多数无线系统都使用单独的片外滤波器而不是完全集成的带通滤波器。蜂窝无线接收机需要在存在其他带内和带外干扰信号的情况下恢复微弱的所需信号(阻止者)。这些接近期望信号的干扰信号需要被抑制。为此,使用频带选择滤波器为带外信号提供衰减,随后的基带低通信道选择滤波器提供信道选择。现有的直接为蜂窝应用在RF上提供信道选择的滤波器在阻带中无法充分满足全部LTE要求。本文提出了几种基于N路径滤波器的技术来处理大型带外阻塞器。由于开关电阻非零,因此经典N路径滤波器的最终抑制受到限制。带通(BP)和带阻(BS)滤波器的级联配置用于在通带的两侧创建陷波,通过使用前馈和反馈gm单元,带阻滤波器的中心频率会发生偏移。该滤波器可在0.2 GHz至1.8 GHz范围内可调。所提出的可调滤波器在20 MHz偏移处具有48.3 dB抑制,而在偏离中心频率的45 MHz处具有58.8 dB抑制。滤波器的模拟阻带抑制为71.2 dB。但是,很难在不影响后面的通带响应的情况下创建附近的陷波。为了克服上述困难,提出了一种基于两路径信号消除技术的新架构,以在通带附近创建陷波,以处理较大的阻塞。该滤波器由与可调BS滤波器并联的可调BPF组成。由于BP和BS滤波器相减,因此可以创建两个陷波。这种组合可确保在宽调谐范围内具有正确的幅度和相位关系,以创建可调的TZ,而不会牺牲通带的增益。本文详细介绍了设计注意事项和指南,以及在存在寄生和时钟信号形状不理想等非理想情况下的滤波器性能分析。所提出的滤波器是通过65nm CMOS工艺中的高Q N路径滤波器模块实现的。滤波器的通带可在0.1 GHz至1.4 GHz范围内可调,其3-dB带宽为9.8-10.2 MHz,增益为21.5-24 dB,噪声系数为3-4.2 dB,总功耗为50- 73兆瓦TZ在通带的两侧均以最小25 MHz的偏移量创建,并且可在20 MHz范围内进行调谐,并具有高达60 dB的抑制性能。测得的阻塞器1 dB压缩点为8 dBm,带外IIP3为23 dBm。所报道的滤波器为多标准,多频率软件定义的无线电应用提供了一种有希望的片上滤波解决方案,具有改善的干扰缓解能力。;最近,提出了用于处理带外阻塞的各种片上技术。尽管这些方法适合于抑制单个频率阻塞,但是在宽带阻塞的存在下,所创建的单频陷波是无效的,宽带阻塞随着高速无线通信的发展变得越来越普遍。设计并制造了一种可调谐有源带通滤波器,该滤波器具有接近通带的带宽可调陷波,可抑制宽带衰减并具有高衰减。所提出的滤波器由一个三极N路径带阻滤波器和一个N路径带通滤波器串联而成,其中带通滤波器的中心频率从带阻滤波器偏移。通过适当调节带阻滤波器中的耦合电容器,可以创建三个相邻的陷波,从而提供更大的抑制带宽。在65 nm CMOS中实现的滤波器表现出在0.1-1.1 GHz之间可调的通带,其3-dB带宽为12.4-14.2 MHz,增益为9.5-10.3 dB,噪声系数为4.3-5.8 dB,并且总功耗为40-64.3mW。阻塞器的1 dB压缩点为6.5 dBm,带外IIP3为18.4 dBm。

著录项

  • 作者

    Hasan, Md Naimul.;

  • 作者单位

    University of California, Davis.;

  • 授予单位 University of California, Davis.;
  • 学科 Electrical engineering.;Communication.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 132 p.
  • 总页数 132
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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