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Design and Validation of a High-Power, High Density All Silicon Carbide Three-Level Inverter

机译：设计和验证高功率，高密度所有碳化硅三级逆变器

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作者
Wang, Zhongjing.;
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作者单位

University of Arkansas.;

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授予单位 University of Arkansas.;
学科
学位 Ph.D.
年度 2021
页码 133 p.
总页数 133
原文格式 PDF
正文语种 eng
中图分类
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1. Design and Validation of A 250-kW All-Silicon Carbide High-Density Three-Level T-Type Inverter [J] . Wang Zhongjing, Wu Yuheng, Mahmud Mohammad Hazzaz, Emerging and Selected Topics in Power Electronics, IEEE Journal of . 2020,第1期

机译：250千瓦全碳化硅高密度三级T型逆变器的设计与验证
2. Field-plate design for edge termination in silicon carbide high-power Schottky diodes [J] . S. Noor Mohammad, Francis J. Kub, Charles R. Eddy Jr. Journal of Vacuum Science & Technology . 2011,第2期

机译：碳化硅大功率肖特基二极管边缘端接的场板设计
3. Design and Analyse of Silicon Carbide JFET Based Inverter [J] . Zheng Xu, Sanbo Pan WSEAS Transactions on Circuits and Systems . 2012,第7a9期

机译：碳化硅JFET型逆变器的设计与分析
4. Analysis and design of a high efficiency, high power density three-phase silicon carbide inverter [C] . Michael Eull, Matthias Preindl, Ali Emadi IEEE Transportation Electrification Conference and Expo . 2016

机译：高效，高功率密度三相碳化硅逆变器的分析与设计
5. Epitaxial growth and characterization of 4H-silicon carbide on low off-axis substrates for high-power devices. [D] . Shrivastava, Amitesh. 2008

机译：高功率器件的低轴外衬底上4H碳化硅的外延生长和表征。
6. Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density [O] . In Hyuk Son, Jong Hwan Park, Soonchul Kwon, -1

机译：体积能量密度高的锂离子电池上无碳化硅的石墨烯在硅上的生长
7. Gate driver design for normally-off SiC JFET: Silicon Carbide technology for PV inverters [O] . Grigorjevs Aleksejs 2011

机译：常关型SiC JFET的栅极驱动器设计：用于光伏逆变器的碳化硅技术
8. Development of High-Temperature, High-Power, High-Efficiency, High- Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties [R] . Sung, Y. , Mazzola, M. S. 2005

机译：使用碳化硅（siC）交付订单交付订单交付订单开发高温，高功率，高效率，高压转换器：基于材料和器件属性的siC VJFET设计和性能的关键分析

Design and Validation of a High-Power, High Density All Silicon Carbide Three-Level Inverter

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