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Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs

机译：高速Algan / GaN Hemts的辐射响应与可靠性

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作者
Chen, Jin.;
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作者单位

Vanderbilt University.;

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授予单位 Vanderbilt University.;
学科
学位 Ph.D.
年度 2016
页码 107 p.
总页数 107
原文格式 PDF
正文语种 eng
中图分类 AAI13834981;
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专利

1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation [J] . Poling B. S., Via G. D., Bole K. D., Microelectronics & Reliability . 2017,第jana期

机译：暴露于重离子辐射后的商用现成的Algan / gan Hemt装置可靠性研究
3. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs [J] . Chen Jin, Puzyrev Yevgeniy S., Jiang Rong, Nuclear Science, IEEE Transactions on . 2015,第6期

机译：施加偏压和高场应力对GaN / AlGaN HEMT辐射响应的影响
4. Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation [J] . Anderson T.J., Koehler A.D., Greenlee J.D., Electron Device Letters, IEEE . 2014,第8期

机译：取决于衬底的效应对AlGaN / GaN HEMT对2 MeV质子辐射的响应
5. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT [C] . Padmanabhan Balaji, Vasileska Dragica, Goodnick Stephen M. Computational Electronics (IWCE), 2012 15th International Workshop on . 2012

机译：GaN HEMT的可靠性：GaN / AlGaN / AlN / GaN HEMT中的电流衰减
6. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
7. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
8. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
9. Development of Passivation Technology for Improved GaN/AlGaN HEMT Performance and Reliability [R] . Abernathy, C. R. , Hunter-Edwards, A. 2005

机译：改善GaN / alGaN HEmT性能和可靠性的钝化技术发展

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