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Development of aluminum gallium nitride-based emitters in the form of graded-index separate confinement heterostructure (GRINSCH)

机译：渐变折射率分离限制异质结构（GRINSCH）形式的氮化铝镓基发射极的开发

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作者
Sun, Haiding;
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作者单位

Boston University;

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授予单位 Boston University;
学科
学位 Ph.D.
年度 2015
页码 216 p.
总页数 216
原文格式 PDF
正文语种 eng
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专利

1. Effect of indium in Al_(0.65)Ga_(0.35)N/ Al_(0.8)Ga_(0.2)N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH) [J] . Haiding Sun, Emanuele Francesco Pecora, Jeff Woodward, Physica status solidi . 2016,第5期

机译：铟在Al_（0.65）Ga_（0.35）N / Al_（0.8）Ga_（0.2）N MQW中对梯度折射率分离限制异质结构（GRINSCH）形式的深紫外激光结构发展的影响
2. Degradation defects in electron-beam-pumped Zn_(1-x)Cd_x/Se ZnSe graded-index separate-confinement heterostructure (GRINSCH) blue and blue-green lasers [J] . Jean-Marc Bonard, Jean-Daniel Ganiere, Lia Vanzetti, Philosophical Magazine Letters . 1997,第3期

机译：电子束泵浦Zn_（1-x）Cd_x / Se ZnSe梯度折射率分离约束异质结构（GRINSCH）蓝和蓝绿色激光器中的降解缺陷
3. UV emitters based on an AlGaN p-n junction in the form of graded-index separate confinement heterostructure [J] . Haiding Sun, Theodore D. Moustakas _Applied Physics Express . 2014,第1期

机译：基于AlGaN p-n结的UV发射器，其形式为渐变折射率分离的限制异质结构
4. Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers [C] . Offsey, S.D., Schaff, . 1989

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束异质结构单量子阱激光器的光学和微波性能
5. Growth and characterization of gallium nitride and aluminum gallium nitride thin films and heterostructures and the associated development and evaluation of ultraviolet light-emitting diodes. [D] . Park, Ji-Soo. 2005

机译：氮化镓和氮化铝镓薄膜及其异质结构的生长和表征以及紫外发光二极管的相关开发和评估。
6. Electrically driven phosphor-free white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures [O] . Seung-Hyuk Lim, Young-Ho Ko, Christophe Rodriguez, 2016

机译：电气驱动的无磷白色发光二极管采用基于氮化镓的双同心截头金字塔结构
7. Measurement of the ambipolar carrier capture time in a gallium arsenide/aluminum gallium arsenide separate confinement heterostructure quantum well [O] . Blom, PWM Paul, Mols, RFXAM Rainier, Haverkort, JEM Jos, 1990

机译：砷化镓/砷化镓铝分离限制异质结构量子阱中双极性载流子捕获时间的测量
8. Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser. [R] . Vawter, G. A., Myers, D. R., Brennan, T. M., 1990

机译：低阈值电流注入 - 平面 - 埋层 - 异质结构，渐变折射率，分离 - 限制 - 异质结构Gaas-alGaas激光器。

Development of aluminum gallium nitride-based emitters in the form of graded-index separate confinement heterostructure (GRINSCH)

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