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Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application

机译：用于高级栅极电介质应用的氧化ha和硅酸ha的加工和可靠性研究

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作者
Choi, Rino;
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作者单位

The University of Texas at Austin;

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授予单位 The University of Texas at Austin;
学科
学位 Ph.D.
年度 2004
页码 149 p.
总页数 149
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Reliability of Low-Temperature-Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-Effective Nitric Acid Oxidation Technique [J] . Chang C.-H., Hwu J.-G. IEEE transactions on device and materials reliability . 2007,第4期

机译：成本有效的硝酸氧化技术制备的低温处理氧化Ha栅电介质的可靠性
2. Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks [J] . Heng-Sheng Huang, Piyas Samanta, Tsung-Jian Tzeng, Applied Physics Letters . 2012,第2期

机译：薄硅酸ha和氮化硅酸gate栅电介质叠层中的电子俘获
3. Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors [J] . Gao Y. N., Xu Y. L., Lu J. G., Journal of Materials Chemistry, C. materials for optical and electronic devices . 2015,第43期

机译：可溶液加工的非晶硅酸ha介电材料及其在氧化物薄膜晶体管中的应用
4. An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer [C] . J. Gutt, G.A. Brown, Yoshi Senzaki, Symposium Proceedings vol.811; Symposium on Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions; 20040413-16; San Francisco,CA(US) . 2004

机译：一种先进的高k晶体管，利用金属有机前驱体以臭氧作为氧化剂氧化and和硅酸的ALD沉积
5. Process development, characterization, transient relaxation, and reliability study of hafnium oxide and hafnium silicate gate oxide for 45nm technology and beyond. [D] . Akbar, Mohammad Shahariar. 2005

机译：用于45nm及以后工艺的氧化gate和硅酸ha栅氧化物的工艺开发，表征，瞬态松弛和可靠性研究。
6. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices [O] . Masamichi Suzuki 2012

机译：用于高级CMOS器件的铝酸镧高介电常数栅氧化物的综合研究
7. Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction [O] . Johnson-Steigelman, H. T., Brinck, A. V., Lyman, P. F. 2002

机译：制备用作栅极的硅酸铪介电层氧化物通过固态反应
8. BIBLIOGRAPHY OF HAFNIUM OXIDE, HAFNIUM SILICATE AND HAFNIUM CARBIDE [R] . C. E. Curtis 1952

机译：氧化铪，硅酸镉和碳化铪的参考文献

Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application

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