Atomic Layer Deposition of Tin Oxide and Zinc Tin Oxide: Understanding the Reactions of Alkyl Metal Precursors with Ozone.

摘要

This work is focused on depositing thin films of transparent conducting oxides, namely tin oxide and zinc tin oxide. Atomic layer deposition was used as the method to deposit these materials from alkyl-metal precursors and ozone. In addition to depositing these materials and utilizing them in optoelectronic devices, significant computational and experimental resources were employed to understand the fundamental reaction chemistry between the alkyl-metal precursors and surface functional groups, as well as, the alkyl-metal precursors and ozone. The mechanistic insight gained from the theoretical work indicated that the surface acidity greatly affected the adsorption of certain alkyl-tin precursors on surface hydroxyls. In addition, it was also found that ozone could react with metal-alkyls resulting in the formation of hydroxide functional groups and the elimination of acetaldehyde which was observed experimentally.