Determining the rate of ligand induced charge transfer effects on quantum dots.

摘要

In this report, charge carrier dynamics and rate of electron transfer is investigated between two bis(thioether)silane (R2Bts Me) ligands and 2.65 nm CdSe core quantum dots (QDs). Isothermal titration calorimetry (ITC) data is used to determine binding constant and percentage of occupied sites for these systems. The data is then used in conjunction with steady-state photoluminescence (SSPL) and time-resolved photoluminescence (TRPL) data in order to determine charge transfer rates as a function of bound ligand and intrinsic charge transfer rates that are dependent upon the species of ligand bound to QD surface. Interesting results were found through this analysis, and further testing using other ligands and CdSe QDs of different sizes may provide a more complete picture of this type of analysis with ligand-QD systems. Further experimental techniques are also postulated.