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Single Photon Counting Detectors for Low Light Level Imaging Applications.

机译:单光子计数检测器,用于弱光成像应用。

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摘要

This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for moderate to high flux rates where dark noise and CIC are insignificant noise sources. Research into decreasing the dark count rate of GM-APDs will lead to development of imaging arrays that are competitive for low light level imaging and spectroscopy applications in the near future.
机译:本文介绍了基于半导体的光子计数检测器技术的最新技术。 HgCdTe线性模式雪崩光电二极管(LM-APDs),硅Geiger模式雪崩光电二极管(GM-APDs)和电子倍增CCD(EMCCD)通过它们在各种天文学应用中的当前和未来性能进行了比较。在夏威夷大学的基础上,对LM-APD进行了理论研究。 EMCCD通过NASA喷气推进实验室的设备进行了理论和实验研究。这项研究的重点是GM-APD成像阵列,该阵列是由MIT林肯实验室开发并在RIT检测器中心进行测试的。 GM-APD研究包括对SNR和各种性能指标的理论分析,包括暗计数率,后脉冲,光子检测效率和像素内灵敏度。辐射损伤对GM-APD的影响还通过60 MeV质子引入50 krad(Si)的累积剂量来表征。蒙特卡罗模拟和实际观察模拟的广泛开发已完成,包括模拟天文成像和自适应光学波阵面传感。基于理论模型和实验测试,比较了每种检测器的当前最新性能和预计的未来性能,以用于各种应用。 LM-APD性能目前无法与其他光子计数技术竞争,因此被排除在基于应用程序的比较之外。在当前最先进的技术中,光子计数模式的EMCCD在长时间曝光的情况下胜过GM-APD,尽管由于时钟感应电荷(CIC),GM-APD在短曝光的情况下(快速读出)更好。 )。从长远来看,GM-APD暗电流的小幅改善将使其在长期和短期暴露的情况下都具有极低的通量,这是出色的。 GM-APD的效率很可能总是会低于EMCCD,但是,对于中到高通量率(暗噪声和CIC是无关紧要的噪声源)的情况,这尤其不利。降低GM-APD暗计数率的研究将导致成像阵列的发展,该阵列在不久的将来对低光水平成像和光谱学应用具有竞争力。

著录项

  • 作者

    Kolb, Kimberly.;

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Astronomy.;Optics.;Materials science.
  • 学位 Ph.D.
  • 年度 2015
  • 页码 235 p.
  • 总页数 235
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

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