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Design of 3.3V digital standard cells libraries for LEON3.

机译:用于LEON3的3.3V数字标准单元库的设计。

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摘要

Scope and Method of Study. The scope of the research work was to develop 3.3V digital standard cell library for LEON3 operable at 200°C using Peregrine 0.5mum process. The dimension of the transistors was determined based on the work of Singravelan Vishwanathan. Layout and abstracted view were generated for the library. In total we have 259 cells. The cell library is characterized for timing and power data. The characterized data of the cells are documented in html format along with the lib format. The lib format file is used for synthesis and place and route.;Findings and Conclusions. The dimension of the minimum size transistor used IX NMOS is length 1im and width 1.4mum and dimension of IX PMOS is length 0.6mum and width 1.6mum and the drive strength was set using buffer. The cell library was completed, characterized and abstracted. The cells were simulated across temperature range of -25°C to 200°C and across a supply voltage range of 3V to 3.6V. In the process of characterization and abstraction we gained a good understanding of the characterization and abstraction tool. The layout was validated by checking the DRC and LVS and we were finally able to complete the place and route of LEON3 within a area of 6.5mm by 6.5mm.
机译:研究范围和方法。研究工作的范围是使用Peregrine 0.5mum工艺开发适用于200°C的LEON3的3.3V数字标准单元库。晶体管的尺寸根据Singravelan Vishwanathan的工作确定。为该库生成了布局和抽象视图。总共我们有259个细胞。单元库的特征在于定时和功率数据。单元格的特征数据以html格式和lib格式记录。 lib格式文件用于合成以及放置和路由。发现和结论。 IX NMOS使用的最小尺寸晶体管的尺寸为长1im和宽1.4mum,IX PMOS的尺寸为长0.6mum和宽1.6mum,并使用缓冲器设置驱动强度。单元库已完成,特征化和抽象化。在-25°C至200°C的温度范围以及3V至3.6V的电源电压范围内对电池进行了仿真。在表征和抽象的过程中,我们对表征和抽象工具有了很好的了解。通过检查DRC和LVS验证了布局,我们终于能够在6.5mm x 6.5mm的区域内完成LEON3的放置和布线。

著录项

  • 作者

    Ahmed, Rehan.;

  • 作者单位

    Oklahoma State University.;

  • 授予单位 Oklahoma State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2009
  • 页码 108 p.
  • 总页数 108
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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