首页> 外文学位 >COMPETITION BETWEEN SUPERCONDUCTIVITY AND LOCALIZATION IN ULTRATHIN AMORPHOUS MOLYBDENUM-GERMANIUM FILMS (TWO-DIMENSIONAL, FLUX-FLOW RESISTANCE).
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COMPETITION BETWEEN SUPERCONDUCTIVITY AND LOCALIZATION IN ULTRATHIN AMORPHOUS MOLYBDENUM-GERMANIUM FILMS (TWO-DIMENSIONAL, FLUX-FLOW RESISTANCE).

机译:超薄非晶态锗钼薄膜的超导性和局部化之间的竞争(二维,抗通量性)。

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摘要

The primary result of this work was a systematic examination of the suppression of superconductivity with increasing disorder in two-dimensional (2D) model systems. For this study, single ultrathin films of homogeneous amorphous molybdenum-germanium (Mo-Ge) were synthesized using special vertical multilayer deposition techniques. These films exhibit essentially constant equivalent bulk properties down to film thicknesses of about 10 (ANGSTROM)ngstroms, and therefore represent model 2D systems.; With increasing 2D disorder there is a rapid suppression of the superconducting transition temperature. More mundane origins such as simple pairbreaking effects or "proximity effects" from neighboring layers do not appear to explain this result. The results are qualitatively and quantitatively consistent with the most recent theories of localization effects upon superconductivity, where the disorder leads to anomalous electron diffusion. Among other predictions, this anomalous diffusion leads to an increase in the Coulomb interaction, which inherently competes with superconductivity. Additional differences are found in the measured critical fields, fluctuation conductivity and superconductive tunneling in these films.; It is of added importance to establish the validity of these theories, for initial predictions indicate that disorder has profound implications upon bulk superconductivity. Such effects would be of considerable technological importance.; Additionally, several normal state properties were measured in the same films. As the localization theory for normal state properties is more developed than for the superconducting state, it provides additional checks upon the validity of the localization treatment for our films. The measured temperature dependence of the resistance, magnetoresistance, density of states anomaly, and the rise in film resistivity with increasing sheet resistance appear to be self-consistent and in agreement with theory.; Additional topics include the observation of a new universal behavior for the superconducting fluxflow in thin films. These measurements were made upon the same homogeneous ultrathin Mo-Ge films used for the localization studies above. Also, initial studies were made on the effect of disorder upon superconductivity in the aluminum-silicon system. These films differ from our Mo-Ge films in that they are inhomogeneous and have a much reduced spin-orbit scattering rate.
机译:这项工作的主要结果是在二维(2D)模型系统中系统地检查了随着无序度增加而产生的超导抑制。对于这项研究,使用特殊的垂直多层沉积技术合成了均匀的非晶态钼锗(Mo-Ge)的单个超薄膜。这些膜表现出基本恒定的当量体积特性,低至约10(ANGSTROM)ngstroms的膜厚度,因此代表2D模型系统。随着二维无序度的增加,超导转变温度得到了快速抑制。更多平凡的起源,例如简单的成对断裂效应或来自相邻层的“接近效应”似乎都无法解释这一结果。该结果在质量和数量上与对超导性的最新局部化理论相一致,在该理论中,无序导致电子扩散异常。除其他预测外,这种反常扩散会导致库仑相互作用的增加,从而固有地与超导电性竞争。在这些薄膜的测量临界场,波动电导率和超导隧穿中发现了其他差异。建立这些理论的有效性尤为重要,因为最初的预测表明,无序对体超导具有深远的影响。这种影响将具有相当大的技术重要性。另外,在相同的薄膜中测量了几种正常状态的性质。由于比起超导态,用于正常状态特性的定位理论更加发达,它为我们的薄膜的定位处理的有效性提供了额外的检验。所测得的电阻,磁阻,状态密度异常以及薄膜电阻率随薄层电阻增加的温度相关性似乎是自洽的,并且与理论一致。其他主题包括观察薄膜中超导通量流的新普遍行为。这些测量是在与用于上述定位研究的相同的均匀超薄Mo-Ge膜上进行的。此外,对铝硅体系中无序性对超导性的影响进行了初步研究。这些薄膜与我们的Mo-Ge薄膜的不同之处在于它们不均匀并且自旋轨道散射率大大降低。

著录项

  • 作者

    GRAYBEAL, JOHN M.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1985
  • 页码 215 p.
  • 总页数 215
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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